| PART |
Description |
Maker |
| S4402 |
Si APD φ1 mm quadrant APD
Si APD ヵ1 mm quadrant APD
|
Hamamatsu Corporation
|
| FU-318SAP-VM6 FU-318AP-VM6 |
APD MODULE FOR LONG WAVELENGTH BAND
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FU-318SAP-X2MX FU-318SAP-V2M1 FU-318SAP-V2M2 FU-31 |
APD MODULE FOR LONG WAVELENGTH BAND APD的模块长波段
|
Mitsubishi Electric, Corp.
Zentrum Microelectronic Dresden AG
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FU-319SPA-CV6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE
|
Mitsubishi Electric Sem...
|
| NR8500 NR8500FR-BB-AZ NR8500FR-CB-AZ NR8500CP-BC-A |
CAP 1.0PF 25V .10 PF NP0(C0G) SMD-0603 TR-7 PLATED-NI/SN
NECs 050 um InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS 邻舍050微米铟镓APD的同轴包55字节/秒和622 Mb / s的应
NECs 050 um InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS 邻舍050微米铟镓砷APD的同轴包55字节/秒和622 Mb / s的应
NECs φ50 μm InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
|
California Eastern Laboratories, Inc.
California Eastern Labs
|
| SD197-70-72-661 |
Cooled Large Area 5mm Red Enhanced Silicon APD Module
|
Advanced Photonix, Inc.
|
| FU-319SPA-W6M20 319SPA-V6M20 319SPA-W6M20 319SPA-X |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE 铟镓砷APD的前置放大器模块，用.31微米.55 UM的波长范
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| NR4510UR |
InGaAs APD ROSA
|
CEL
|
| FRM5N141GT |
InGaAs-APD/Preamp Receiver
|
Eudyna Devices Inc
|
| S8664-1010 S8664-10K S8664-05K S8664-02K S8664-30K |
Short wavelength type APD
|
Hamamatsu Corporation
|
| S8890-10 S8890-15 S8890-02 S8890-05 S8890 S8890-30 |
Long wavelength type APD
|
Hamamatsu Corporation
|
